Jeddah, Saudi Arabia

Tariq Salim Alsaiary

This inventor holds 1 USPTO granted patent. Top assignee: King Abdulaziz City for Science and Technology. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tariq Salim Alsaiary. Retrieved from https://idiyas.com/inventor/tariq-salim-alsaiary

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Innovations of Tariq Salim Alsaiary in Pressure Sensor Technology

Introduction

Tariq Salim Alsaiary is a notable inventor based in Jeddah, Saudi Arabia. He has made significant contributions to the field of pressure sensor technology. His work primarily focuses on the integration of microelectromechanical systems (MEMS) with complementary oxide semiconductor (CMOS) electronics.

Latest Patents

Tariq holds a patent for "CMOS compatible capacitive absolute pressure sensors." This invention addresses the challenges of monolithic integration of MEMS sensors with CMOS electronics. The patent outlines a new manufacturing process that involves back-etching and bonding of a silicon carbide (SiC) capacitive pressure sensor. This innovative process embeds critical MEMS features within a shallow trench in the silicon substrate, allowing for concurrent processing with CMOS steps.

Career Highlights

Tariq is associated with King Abdulaziz City for Science and Technology, where he continues to advance research in sensor technology. His work has been instrumental in developing high-quality thin diaphragms necessary for pressure-dependent MEMS deformation.

Collaborations

Tariq collaborates with Ibrahim A Alhomoudi, contributing to the advancement of pressure sensor technologies.

Conclusion

Tariq Salim Alsaiary's innovative work in CMOS compatible capacitive absolute pressure sensors showcases his expertise in integrating MEMS with CMOS technology. His contributions are paving the way for advancements in pressure sensing applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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