Tanmoy Roy

Title: Tanmoy Roy: Innovator in Memory Technology

Introduction

Tanmoy Roy is a notable inventor based in Grenoble, France. He has made significant contributions to the field of memory technology, holding 2 patents that showcase his innovative approach to in-memory computing.

Latest Patents

One of his latest patents is titled "In-memory compute array with integrated bias elements." This invention involves an in-memory compute (IMC) device that includes an array of memory cells and control logic. The array is structured with rows and columns of memory cells, where a subset of these cells forms computational engines and another subset forms bias engines. The control logic generates signals to perform various IMC operations, store results, and combine them with bias values.

Another significant patent is the "Dual port memory cell with improved access resistance." This patent focuses on a circuit layout for a dual port static random-access-memory (SRAM) cell. The design features active regions in a substrate with polysilicon gate electrodes defining the transistors. The layout includes an eight-transistor (8T) configuration that optimizes the aspect ratio and routing for improved performance.

Career Highlights

Tanmoy Roy is currently employed at STMicroelectronics International N.V., a leading company in semiconductor technology. His work at STMicroelectronics has allowed him to push the boundaries of memory technology and contribute to advancements in the field.

Collaborations

He has collaborated with talented coworkers such as Anuj Grover and Nitin Chawla, further enhancing the innovative environment in which he works.

Conclusion

Tanmoy Roy's contributions to memory technology through his patents reflect his dedication to innovation and excellence in the field. His work continues to influence advancements in memory systems and computing.