Ibaraki, Japan

Taniguchi Takaaki

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Taniguchi Takaaki. Retrieved from https://idiyas.com/inventor/taniguchi-takaaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: The Innovations of Taniguchi Takaaki

Introduction

Taniguchi Takaaki is a notable inventor based in Ibaraki, Japan. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on dielectric materials and their applications in electronic devices.

Latest Patents

Taniguchi holds a patent for a dielectric monolayer thin film, which is crucial for capacitors and semiconductor devices. The patent describes a method of forming this thin film, which includes an oxide with a perovskite-type crystal structure. This innovative material is chemically bonded with hydrogen, enhancing its properties for electronic applications.

Career Highlights

Taniguchi is associated with Samsung Electronics Co., Ltd., where he has been instrumental in advancing semiconductor technologies. His expertise in dielectric materials has positioned him as a key player in the development of next-generation electronic devices.

Collaborations

Taniguchi has worked alongside talented colleagues such as Hyungjun Kim and Sasaki Takayoshi. Their collaborative efforts have contributed to the success of various projects within the company.

Conclusion

Taniguchi Takaaki's contributions to the field of semiconductor technology through his innovative patents and collaborations highlight his importance as an inventor. His work continues to influence advancements in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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