The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Sep. 30, 2020
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

National Institute for Materials Science, Ibaraki, JP;

Inventors:

Hyungjun Kim, Suwon-si, KR;

Taniguchi Takaaki, Ibaraki, JP;

Sasaki Takayoshi, Ibaraki, JP;

Osada Minoru, Ibaraki, JP;

Chan Kwak, Yongin-si, KR;

Youngnam Kwon, Suwon-si, KR;

Changsoo Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/12 (2006.01); H01G 4/005 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01G 4/1209 (2013.01); H01G 4/005 (2013.01); H01L 28/56 (2013.01);
Abstract

Provided are a dielectric monolayer thin film, a capacitor and a semiconductor device each including the dielectric monolayer thin film, and a method of forming the dielectric monolayer thin film, the dielectric monolayer thin film including an oxide which is represented by Formula 1 and has a perovskite-type crystal structure, wherein the oxide has a surface chemically bonded with hydrogen.ABCnO  <Formula 1>


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