Company Filing History:
2 out of 544 
1 out of 9,150 
Years Active: 1996-1997
Title: Tan F Lei: Innovator in Schottky Diode Technology
Introduction
Tan F Lei is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of Schottky diodes. With a total of 3 patents to his name, his work has had a considerable impact on the industry.
Latest Patents
One of Tan F Lei's latest patents is focused on a new Schottky diode structure, specifically the Pt/Al/n-InP configuration. This invention discloses a method of making the Schottky diode structure, where the thickness of the aluminum layer is restricted to a range of about 80-120 angstroms. This innovative structure achieves a barrier height of 0.74 eV and an ideality factor of 1.11 after being annealed at 300 degrees Celsius for 10 minutes. The improvement in barrier height is attributed to the formation of aluminum oxide as the interfacial layer.
Career Highlights
Throughout his career, Tan F Lei has worked with esteemed organizations such as the National Science Council and the Industrial Technology Research Institute. His experience in these institutions has allowed him to refine his expertise in semiconductor technologies and contribute to various research projects.
Collaborations
Tan F Lei has collaborated with notable colleagues, including Wen C Huang and Chung L Lee. These partnerships have further enhanced his research and development efforts in the field of semiconductor technology.
Conclusion
Tan F Lei's contributions to the development of Schottky diodes exemplify his innovative spirit and dedication to advancing semiconductor technology. His patents and collaborations reflect his commitment to excellence in this critical field.