This inventor holds 1 USPTO granted patent. Top assignee: Fujitsu Corporation. Active years: 2001.
Company Filing History:
Years Active: 2001
Title: Tamon Shinmoto: Innovator in DRAM Semiconductor Technology
Introduction
Tamon Shinmoto is a notable inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of DRAM devices. His innovative approach has led to advancements that enhance the performance and efficiency of semiconductor devices.
Latest Patents
Shinmoto holds a patent for a DRAM semiconductor device that includes an oblique area in active regions and its manufacture. This invention features a semiconductor substrate with a field insulating film, multiple active regions, and a gate electrode. The design incorporates source/drain regions, bit lines, and word lines, with unique configurations that improve the functionality of the device. The patent highlights the oblique area formed relative to the bit and word lines, which contributes to the overall efficiency of the DRAM semiconductor.
Career Highlights
Tamon Shinmoto is associated with Fujitsu Corporation, where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's reputation but has also played a crucial role in the broader semiconductor industry. With a focus on innovation, Shinmoto continues to push the boundaries of what is possible in semiconductor design.
Collaborations
Shinmoto has collaborated with notable colleagues such as Taiji Ema and Satoru Saitoh. These partnerships have fostered an environment of innovation and creativity, leading to significant advancements in their respective fields.
Conclusion
Tamon Shinmoto's contributions to DRAM semiconductor technology exemplify the impact of innovative thinking in the tech industry. His patent and work at Fujitsu Corporation highlight the importance of continuous development in semiconductor devices.