Fujitsu Corporation

Tamon Shinmoto

Taiji Ema

Satoru Saitoh

Koichi Masuda

A DRAM semiconductor device is provided which includes a semiconductor substrate, a field insulating film formed on the semiconductor substrate, a plurality of active regions in the semiconductor substrate, each surrounded by the field insulating film, a gate electrode traversing each of the plurality of active regions, a pair of source/drain regions formed in each of the plurality of active regions on both sides of the gate electrode, a plurality of bit lines extending along one direction, each connected to one of the pair of source/drain regions, a plurality of word lines extending along a direction perpendicular to the bit lines, each of the plurality of word lines being connected to the gate electrode, and a plurality of capacitor elements extending over said gate electrode each connected to the other of the pair of source/drain regions, wherein each of the plurality of active regions includes an oblique area formed obliquely relative to the bit and word lines and a parallel area formed in parallel to the bit line and having a width greater than the width of the oblique area, and each of the word lines has a bent portion intersecting substantially at a right angle with the oblique area of each of the active regions.

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Kanagawa, Japan

Tamon Shinmoto