Beaverton, OR, United States of America

Tamal Mukherjee

This inventor holds 1 USPTO granted patent and 6 published patent applications. Top assignee: Lam Research Corpporation. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tamal Mukherjee. Retrieved from https://idiyas.com/inventor/tamal-mukherjee-3in40102

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: The Innovations of Tamal Mukherjee

Introduction

Tamal Mukherjee is a notable inventor based in Beaverton, Oregon. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent in atomic layer etching.

Latest Patents

Tamal Mukherjee holds a patent for a method of atomic layer etching for subtractive metal etch. This patent describes a process where at least a region of a surface of a metal-containing layer is modified by exposing it to a modification gas. This results in a modified metal-containing region, while an adjacent unmodified region remains intact. The modified region can then be selectively removed using an inert bombardment plasma generated from an inert gas.

Career Highlights

Tamal Mukherjee is currently employed at Lam Research Corporation, a leading company in the semiconductor equipment industry. His work focuses on advancing technologies that enhance the efficiency and precision of semiconductor manufacturing processes.

Collaborations

Some of his notable coworkers include Wenbing Yang and Mohand Brouri, who contribute to the innovative environment at Lam Research Corporation.

Conclusion

Tamal Mukherjee's contributions to atomic layer etching exemplify the innovative spirit within the semiconductor industry. His work continues to influence advancements in manufacturing technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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