The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Feb. 07, 2024
Lam Research Corporation, Fremont, CA (US);
Wenbing Yang, Campbell, CA (US);
Mohand Brouri, Brussels, BE;
Samantha SiamHwa Tan, Newark, CA (US);
Shih-Ked Lee, Fremont, CA (US);
Yiwen Fan, Fremont, CA (US);
Wook Choi, San Jose, CA (US);
Tamal Mukherjee, Beaverton, OR (US);
Ran Lin, Fremont, CA (US);
Yang Pan, Los Altos, CA (US);
Lam Research Corpporation, Fremont, CA (US);
Abstract
A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.