Saga, Japan

Takuya Kobayashi

This inventor holds 1 USPTO granted patent. Top assignee: Tanaka Denshi Kogyo K.k.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takuya Kobayashi. Retrieved from https://idiyas.com/inventor/takuya-kobayashi-wuccoeaa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Takuya Kobayashi: Innovator in Semiconductor Technology

Introduction

Takuya Kobayashi is a notable inventor based in Saga, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on bonding wires.

Latest Patents

Kobayashi holds a patent for a palladium-coated copper bonding wire, along with its manufacturing method and a semiconductor device utilizing this technology. The palladium-coated copper bonding wire features a core material primarily composed of copper, with a palladium layer applied to it. The concentration of palladium in the wire ranges from 1.0 mass % to 4.0 mass %. Additionally, the wire exhibits a work hardening coefficient that indicates a change in elongation rate of 2% or more, with a maximum elongation rate of ε max % being 0.20 or less.

Career Highlights

Kobayashi is associated with Tanaka Denshi Kogyo K.K., where he has been instrumental in advancing semiconductor materials. His work has been pivotal in enhancing the performance and reliability of semiconductor devices.

Collaborations

Kobayashi collaborates with talented colleagues, including Mitsuo Takada and Nanako Maeda. Their combined expertise contributes to the innovative environment at Tanaka Denshi Kogyo K.K.

Conclusion

Takuya Kobayashi's contributions to semiconductor technology through his patent on palladium-coated copper bonding wire exemplify his innovative spirit and dedication to advancing the field. His work continues to influence the development of reliable semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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