Takuji Iida

Title: Takuji Iida: Inventor in Polycrystalline Silicon Carbide

Introduction

Takuji Iida is an inventor based in Tokyo, Japan, associated with Tokai Carbon. His work includes an invention concerning nitrogen-doped polycrystalline silicon carbide (SiC) films and methods for producing them.

Latest Patents

The provided information lists 1 patent for Iida: “Nitrogen-doped polycrystalline SiC film having an average grain size of 0.5 to 5 μm and method for producing the same by performing CVD on a heated base material.” The invention addresses the challenge of producing polycrystalline SiC with small crystal grains while maintaining low volume resistivity. It describes a molded body with an average crystal grain size of 5 μm or less, a specified nitrogen concentration, and a specified product of carrier density and Hall mobility. The numerical values for the nitrogen concentration and carrier-density–mobility product appear incomplete in the supplied description.

Career Highlights

Iida’s listed patent focuses on chemical vapor deposition (CVD) of nitrogen-doped polycrystalline SiC on a heated base material. The stated objective is to combine fine grain size with electrical properties suited to the intended application. The supplied information identifies Tokai Carbon as his company but does not provide further details about his role or career history.

Collaborations

Hiroyuki Jindo and Shohei Oishi are identified as Iida’s coworkers. The provided information does not specify their roles in the patent or describe any particular collaboration.

Conclusion

Takuji Iida’s listed invention concerns producing fine-grained, nitrogen-doped polycrystalline SiC while addressing its electrical resistivity, reflecting his association with materials innovation at Tokai Carbon.