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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12760445 B1

PDFFull Text
Date of Patent:
Oct. 13, 2026

Filed:

Feb. 15, 2023

Nitrogen-doped polycrystalline sic film having an average grain size of 0.5 to 5 .mu.m and method for producing the same by performing cvd on a heated base material

Applicant:

Tokai Carbon Co., Ltd., Tokyo, JP;

Inventors:

Takuji Iida, Tokyo, JP;

Hiroyuki Jindo, Tokyo, JP;

Shohei Oishi, Tokyo, JP;

Ikuya Takahashi, Tokyo, JP;

Yuji Ushijima, Tokyo, JP;

Reiko Yashikida, Tokyo, JP;

Assignee:

TOKAI CARBON CO., LTD., Tokyo, JP;

Attorney:

Hoffmann & Baron, LLP

Primary Examiner:

Kenneth A Bratland, Jr

Int. Cl.
CPC ...
C30B 28/14 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C30B 28/14 (2013.01);
Abstract

The present invention addresses the problem of providing: a polycrystalline SiC molded article that has a small volume resistivity despite having a small crystal grain size; and a method for producing the same. The present invention provides a polycrystalline SiC molded body in which the average crystal grain size of 5 μm or less, a nitrogen concentration of 2.7×10to 5.4×10(pcs./cm), and the product of the carrier density×Hall mobility of 4.0×10to 6.0×10(pcs./cmVsec).

Find Patent Forward Citations

Iida, Takuji. (2026). Nitrogen-doped polycrystalline sic film having an average grain size of 0.5 to 5 .mu.m and method for producing the same by performing cvd on a heated base material (U.S. Patent No. 12760445). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12760445

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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