Hiroyuki Jindo

Title: Hiroyuki Jindo: Inventor in Polycrystalline Silicon Carbide

Introduction

Hiroyuki Jindo is an inventor based in Tokyo, Japan, associated with Tokai Carbon. His patent work addresses the production and electrical properties of nitrogen-doped polycrystalline silicon carbide (SiC).

Latest Patents

Jindo is named on 1 patent: “Nitrogen-doped polycrystalline SiC film having an average grain size of 0.5 to 5 μm and method for producing the same by performing CVD on a heated base material.” The invention aims to produce a polycrystalline SiC molded article with small crystal grains and low volume resistivity. It describes a molded body with an average crystal grain size of 5 μm or less, a specified nitrogen concentration, and a specified product of carrier density and Hall mobility. The disclosed production method uses chemical vapor deposition (CVD) on a heated base material.

Career Highlights

Jindo’s listed patent connects his work with Tokai Carbon and focuses on improving the electrical performance of fine-grained polycrystalline SiC. The supplied information does not provide further details about his role or career history.

Collaborations

Takuji Iida and Shohei Oishi are identified as Jindo’s coworkers. The available information does not specify their roles in the patent or the extent of their collaboration.

Conclusion

Hiroyuki Jindo’s listed invention concerns nitrogen-doped polycrystalline SiC, combining fine grain size with electrical properties targeted for practical applications.