Tokyo, Japan

Takeyoshi Koumoto


Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 25(Granted Patents)


Company Filing History:


Years Active: 2003-2009

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5 patents (USPTO):Explore Patents

Title: Takeyoshi Koumoto: Innovator in Semiconductor Technology

Introduction

Takeyoshi Koumoto is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His innovative work focuses on vapor-phase growth methods and semiconductor manufacturing techniques.

Latest Patents

Koumoto's latest patents include a vapor-phase growth method, a semiconductor manufacturing method, and a semiconductor device manufacturing method. In his vapor-phase growth method, a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate. The process involves three key steps: first, introducing silicon raw material gas into a reaction furnace to deposit a silicon layer under reduced pressure; second, adding both silicon and germanium raw material gases to achieve a desired germanium concentration for the deposition of a silicon-germanium mixed crystal layer; and third, depositing another silicon layer on top of the mixed crystal layer. This method improves the quality of the semiconductor layer by reducing misfit dislocations.

Career Highlights

Koumoto is currently employed at Sony Corporation, where he continues to advance semiconductor technologies. His work has been instrumental in enhancing the performance and reliability of semiconductor devices.

Collaborations

Some of his notable coworkers include Hideo Yamagata and Kenji Atsuumi, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Takeyoshi Koumoto's contributions to semiconductor technology through his innovative patents and work at Sony Corporation highlight his importance in the industry. His advancements in vapor-phase growth methods are paving the way for improved semiconductor devices.

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