Sony Corporation

Takeyoshi Koumoto

Hideo Yamagata

Takashi Noguchi

Tatsushiro Hirata

Yoichi Negoro

Kenji Atsuumi

Shusaku Yanagawa

In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer. Thus, there can be obtained a semiconductor layer in which a misfit dislocation can be improved.

Vapor-phase growth method, semiconductor manufacturing method and semiconductor device manufacturing method

The present invention relates to a semiconductor layer applicable to a hetero-junction bipolar transistor, a forming method thereof, and a semiconductor device and a manufacturing method thereof, for example. The semiconductor layer and the forming method thereof according to the present invention includes a first SiGe film or SiGeC film containing Ge of which the concentration become equal to a thermal expansion coefficient of silicon oxide and a second SiGe film or SiGeC film formed on the first film. In a semiconductor device according to the present invention and a manufacturing method thereof, first and second layers are laminated on an oxide film having an opening, and the first layer has the substantially same thermal expansion coefficient as that of the oxide film and has a thermal expansion coefficient different from that of the second layer. Thus, a stress that is caused by a difference between the thermal expansion coefficients becomes difficult to occur in the laminated film, and hence the occurrence of misfit dislocation can be suppressed. Thus, the present invention is suitable as the application to a hetero-junction bipolar transistor.

Adjusting the germanium concentration of a semiconductor layer for equal thermal expansion for a hetero-junction bipolar transistor device

Disclosed herein is a manufacturing method for a semiconductor device, including heat treatment by light irradiation to a substrate having a base semiconductor and a semiconductor layer formed on the base semiconductor, the semiconductor layer being different in kind from the base semiconductor, wherein the temperature of the substrate is once maintained at an intermediate temperature between a starting temperature and an attainable maximum temperature, or the temperature rise rate from the starting temperature to the intermediate temperature is set smaller than that from the intermediate temperature to the attainable maximum temperature. Accordingly, in the lamp annealing after heteroepitaxial growth, the generation of dislocations in the heteroepitaxial layer can be reduced.

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Tokyo, Japan

Takeyoshi Koumoto