Annaka, Japan

Takesi Satoh

This inventor holds 1 USPTO granted patent. Top assignee: Shin-Etsu Chemical Co., Ltd.. Active years: 1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takesi Satoh. Retrieved from https://idiyas.com/inventor/takesi-satoh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: Takesi Satoh and Silicon Carbide Film Formation

Introduction

Takesi Satoh is an inventor associated with Annaka, Japan, and Shin-Etsu Chemical Co., Ltd. His patent work includes an apparatus designed to form high-purity silicon carbide films on cylindrical surfaces.

Latest Patents

The available information identifies one patent associated with Satoh: Silicon carbide film forming apparatus. The invention describes a chemical vapor phase deposition system that coats the inner surface of a cylindrical member with a high-purity silicon carbide film. The member is heated inside a reaction vessel while source gas containing carbon and silicon is delivered through a movable feed conduit. A separate movable discharge conduit removes used reaction gases. The conduits move through the member in unison, allowing the reaction region to travel along its interior surface. Satoh is credited with 1 patent.

Career Highlights

Satoh’s listed invention addresses the controlled deposition of silicon carbide on the inside of cylindrical components. Its moving gas-feed and discharge arrangement is designed to support continuous coating along the member’s length.

Collaborations

The provided information names Toshiyasu Ohashi and Yoshihiro Kubota as Satoh’s coworkers. It does not specify their roles in the patent or the invention.

Conclusion

Takesi Satoh’s recorded patent contribution focuses on an apparatus for forming high-purity silicon carbide films inside cylindrical members, reflecting a specialized application of chemical vapor phase deposition.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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