The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 1993

Filed:

Oct. 16, 1992
Applicant:
Inventors:

Toshiyasu Ohashi, Annaka, JP;

Yoshihiro Kubota, Takasaki, JP;

Kesazi Harada, Takasaki, JP;

Takesi Satoh, Annaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118725 ; 118715 ; 427237 ; 427238 ; 427249 ;
Abstract

An apparatus for forming a high purity silicon carbide film on the inner surface of a cylindrical member by a chemical vapor phase deposition process is provided. The member to be coated is received in a reaction vessel and heated by a heating means. The apparatus includes a gas feed conduit having a distal end disposed for axial motion within the member, for feeding a source gas containing a carbon source and a silicon source into the interior of the member, and a gas discharge conduit having a distal end disposed for axial motion within the member, for discharging used reaction gases from within the member. The gas feed and discharge conduits are moved so that their distal ends move through the member in unison to continuously move the reaction region.


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Ohashi, Toshiyasu. (1993). Silicon carbide film forming apparatus (U.S. Patent No. 5221355). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5221355

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