Tokyo, Japan

Takeshi Miyakoshi

This inventor holds 1 USPTO granted patent. Top assignee: Renesas Electronics Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takeshi Miyakoshi. Retrieved from https://idiyas.com/inventor/takeshi-miyakoshi-57t5vbbi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations of Takeshi Miyakoshi in Semiconductor Technology.

Introduction

Takeshi Miyakoshi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Takeshi Miyakoshi holds 1 patent for a semiconductor device. This device includes a die pad with an upper surface facing a semiconductor chip, a metal film formed on the upper surface, and a bonding material that covers the metal film. The design features various regions, including a first region that overlaps the semiconductor chip and a third region that is covered with the metal film. The semiconductor chip is strategically mounted on the die pad to optimize functionality.

Career Highlights

Miyakoshi is currently employed at Renesas Electronics Corporation, a leading company in semiconductor solutions. His work at Renesas has allowed him to focus on advancing semiconductor technologies and contributing to the company's innovative projects.

Collaborations

One of his notable coworkers is Katsuhiko Kitagawa. Their collaboration has fostered an environment of innovation and creativity within the company.

Conclusion

Takeshi Miyakoshi's contributions to semiconductor technology exemplify the spirit of innovation. His patent and work at Renesas Electronics Corporation highlight his commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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