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For the Inventor, By the Inventor

Omuta, Japan

Takeshi Gotoh

This inventor holds 6 USPTO granted patents. Top assignee: Denki Kagaku Kogyo Kabushiki Kaisha. Active years: 2001-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takeshi Gotoh. Retrieved from https://idiyas.com/inventor/takeshi-gotoh-a6ymq4rv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 6

% Patents Active = 50.0

Average Co-Inventor Count = 3.1

ph-index = 1

Forward Citations = 25(Granted Patents)


Company Filing History:

goldMedal6 out of 475 
 
Denki Kagaku Kogyo Kabushiki Kaisha
 patents

Years Active: 2001-2015

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6 patents (USPTO):Explore Patents
1. 9190189 - Aluminum nitride substrate for circuit board and production method thereof (2015-11-17),
2. 8268437 - Method for producing ceramic sheet, ceramic substrate using ceramic sheet obtained by such method, and use thereof (2012-09-18),
3. 8029903 - Silicon nitride substrate, silicon nitride circuit board utilizing the same, and use thereof (2011-10-04),
4. 7737065 - Process for producing aluminum nitride sintered compacts (2010-06-15),
5. 7553469 - Aluminum nitride powder and aluminum nitride sintered compact (2009-06-30),
6. 6309737 - Circuit substrate (2001-10-30),

Title: The Innovations of Takeshi Gotoh

Introduction

Takeshi Gotoh is a prominent inventor based in Omuta, Japan. He has made significant contributions to the field of materials science, particularly in the development of advanced substrates for electronic applications. With a total of 6 patents to his name, Gotoh's work is recognized for its innovative approaches and practical applications.

Latest Patents

One of his latest patents is for an aluminum nitride substrate designed for circuit boards. This substrate features aluminum nitride crystal grains with an average grain size of 2 to 5 μm and boasts a thermal conductivity of at least 170 W/m·K. Notably, the substrate does not include a dendritic grain boundary phase and has a breakdown voltage of at least 30 kV/mm at 400°C. The production method involves heating a raw material containing aluminum nitride powder to 1500°C at a pressure of no more than 150 Pa, followed by increasing the temperature to between 1700 and 1900°C in a pressurized atmosphere using a non-oxidizing gas. The cooling process is carefully controlled to reach 1600°C at a rate of no more than 10°C/min. Another significant patent involves a method for producing a highly reliable ceramic sheet with stable quality, which is achieved by reducing voids and utilizing hydroxypropylmethyl cellulose as an organic binder.

Career Highlights

Takeshi Gotoh is currently associated with Denki Kagaku Kogyo Kabushiki Kaisha, a company known for its advancements in chemical and electronic materials. His work has not only contributed to the company's reputation but has also pushed the boundaries of what is possible in the field of electronic substrates.

Collaborations

Throughout his career, Gotoh has collaborated with notable colleagues such as Katsunori Terano and Hiroshi Murata. These partnerships have fostered a creative environment that has led to numerous innovations and advancements in their respective fields.

Conclusion

Takeshi Gotoh's contributions to materials science and electronic substrates are noteworthy and impactful. His innovative patents and collaborations highlight his dedication to advancing technology in meaningful ways.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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