The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

May. 24, 2011
Applicants:

Yusaku Harada, Omuta, JP;

Katsunori Terano, Omuta, JP;

Takeshi Gotoh, Omuta, JP;

Inventors:

Yusaku Harada, Omuta, JP;

Katsunori Terano, Omuta, JP;

Takeshi Gotoh, Omuta, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 9/00 (2006.01); H01B 3/02 (2006.01); C04B 35/581 (2006.01); C04B 35/645 (2006.01); H01L 23/15 (2006.01); H01B 19/00 (2006.01); H05K 1/03 (2006.01);
U.S. Cl.
CPC ...
H01B 3/025 (2013.01); C04B 35/581 (2013.01); C04B 35/645 (2013.01); C04B 35/6455 (2013.01); H01B 19/00 (2013.01); H01L 23/15 (2013.01); H05K 1/0306 (2013.01); C04B 2235/3205 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3222 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/386 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/658 (2013.01); C04B 2235/6565 (2013.01); C04B 2235/661 (2013.01); C04B 2235/786 (2013.01); C04B 2235/85 (2013.01); C04B 2235/87 (2013.01); C04B 2235/9607 (2013.01); Y10T 428/268 (2015.01);
Abstract

Disclosed is an aluminum nitride substrate for a circuit board, the substrate having aluminum nitride crystal grains with an average grain size of 2 to 5 μm and a thermal conductivity of at least 170 W/m·K. The aluminum nitride substrate does not include a dendritic grain boundary phase and has a breakdown voltage of at least 30 kV/mm at 400° C. Also provided is a method for producing the aluminum nitride substrate, including the steps of heating a raw material containing an aluminum nitride powder to 1500° C. at a pressure of at most 150 Pa, then increasing and holding the temperature at 1700 to 1900° C. in a pressurized atmosphere of at least 0.4 MPa using a non-oxidizing gas, then cooling to 1600° C. at a cooling rate of at most 10° C./min.


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