Company Filing History:
Years Active: 1982-1987
Title: Takeo Yoshimi: Innovator in Semiconductor Technology
Introduction
Takeo Yoshimi is a prominent inventor based in Kokubunji, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon nitride films. With a total of 2 patents to his name, Yoshimi's work has had a substantial impact on the efficiency and quality of semiconductor devices.
Latest Patents
Yoshimi's latest patents include a method of forming silicon nitride film and a semiconductor device with high density low temperature deposited silicon nitride. The method of forming a silicon nitride film utilizes a low-pressure CVD method with silane gas and ammonia. By setting the reaction pressure between about 0.05 to 0.25 Torr, he enables the formation of a uniform and high-quality silicon nitride film on large wafers. This process maintains high yield and improved uniformity without compromising film-forming efficiency. The semiconductor device features a passivation layer made of silicon nitride, which contains specific weight percentages of hydrogen, silicon, nitrogen, and oxygen, ensuring optimal density and performance.
Career Highlights
Yoshimi is currently associated with Hitachi, Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.
Collaborations
Yoshimi has collaborated with notable coworkers such as Kiichiro Mukai and Seiki Harada, contributing to various projects that enhance semiconductor technology.
Conclusion
Takeo Yoshimi's contributions to the field of semiconductor technology through his innovative patents and collaborations highlight his role as a key inventor in this industry. His work continues to influence the development of high-quality semiconductor devices.