The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 1987
Filed:
Nov. 14, 1985
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B / ; C23C / ;
U.S. Cl.
CPC ...
428337 ; 427 94 ; 427255 ; 4272552 ; 428446 ; 437241 ;
Abstract
In forming a silicon nitride film by the low-pressure CVD method using a silane gas and ammonia, the reaction pressure is set to lie over a range of from about 0.05 to about 0.25 Torr, enabling a silicon nitride film to be formed, of uniform thickness, highly efficiently even on large wafers, and maintaining high yield, improved uniformity and good quality as a whole without decreasing the film-forming efficiency. Preferably, the reaction pressure is maintained over a range of from 0.1 to 0.2 Torr to further increase the efficiency, while preferably maintaining the temperature over a range of from 700.degree. to 1000.degree. C.