The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1982
Filed:
May. 19, 1981
Kiichiro Mukai, Hachioji, JP;
Seiki Harada, Hachioji, JP;
Shin-ichi Muramatsu, Hachioji, JP;
Atsushi Hiraiwa, Kokubunji, JP;
Shigeru Takahashi, Hachioji, JP;
Katsuhisa Usami, Hinodemachi, JP;
Seiichi Iwata, Sayama, JP;
Satoru Ito, Hinodemachi, JP;
Takeo Yoshimi, Kokubunji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device has a passivation layer disposed on a semiconductor body having at least one circuit element therein. This layer is made of a silicon nitride material containing 0.8-5.9 weight-% of H, together with 61-70 weight-% of Si, 25-37 weight-% of N and up to 0.6 weight-% of O and has a density of 2.9-3.05 gr/cm.sup.3.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile