Hitachinaka, Japan

Takasumi Ooyanagi

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignees: Denso Corpora Tion, Hitachi, Ltd.. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takasumi Ooyanagi. Retrieved from https://idiyas.com/inventor/takasumi-ooyanagi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: The Innovations of Takasumi Ooyanagi

Introduction

Takasumi Ooyanagi is a notable inventor based in Hitachinaka, Japan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative work on silicon carbide (SiC) semiconductor devices. His expertise and inventions have had a lasting impact on the industry.

Latest Patents

Ooyanagi holds a patent for a SiC semiconductor device and method for manufacturing the same. This invention includes a SiC substrate with a drain layer, a drift layer, and a source layer stacked in that order. The device features multiple trenches that penetrate the source layer and reach the drift layer, along with a gate layer on the sidewall of each trench. An insulation film covers the gate layer, and a source electrode is placed on the source layer. Additionally, a diode portion is located in or under the trench, contacting the drift layer to provide a diode. The drift layer between the gate layers of adjacent trenches creates a channel region, while the diode portion is coupled with the source electrode and insulated from the gate layer by the insulation film. Ooyanagi's patent represents a significant advancement in semiconductor technology, with 1 patent to his name.

Career Highlights

Throughout his career, Takasumi Ooyanagi has worked with prominent companies such as Hitachi, Ltd. and Denso Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Ooyanagi has collaborated with talented individuals in his field, including Toshio Sakakibara and Hiroki Nakamura. These partnerships have contributed to the advancement of his projects and the overall progress in semiconductor research.

Conclusion

Takasumi Ooyanagi's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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