Takatsuki, Japan

Takashi Furuta

This inventor holds 3 USPTO granted patents. Top assignee: Matsushita Electronics Corporation. Active years: 1992-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takashi Furuta. Retrieved from https://idiyas.com/inventor/takashi-furuta-m6sedbid

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 3

Forward Citations = 30(Granted Patents)


Location History:

  • Takatsuki, JP (1992 - 1993)
  • Shiga, JP (1999)

Company Filing History:


Years Active: 1992-1999

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3 patents (USPTO):Explore Patents

Title: The Innovations of Takashi Furuta

Introduction

Takashi Furuta is a notable inventor based in Takatsuki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on the development of integrated circuit apparatuses and manufacturing methods that enhance semiconductor devices.

Latest Patents

Furuta's latest patents include a semiconductor integrated circuit apparatus and associated fabrication. This invention is formed on a p-type semiconductor substrate, incorporating bipolar transistors and CMOS transistors. The bipolar transistor features a base extraction electrode, with its side-surface covered by an oxide layer, a silicon nitride layer, and a polysilicon layer. Similarly, the CMOS transistor has a gate electrode with a side-surface also covered by an oxide layer, a silicon nitride layer, and a side-wall layer. Notably, the silicon nitride layer on the base extraction electrode is formed using the same fabrication step as that of the gate electrode.

Another significant patent by Furuta is the manufacturing method of contact hole arrangement of a semiconductor. This invention describes a semiconductor device that includes first and second oxide film regions on a semiconductor substrate's surface. The device features a first impurity diffusion region located at a distance from one of the oxide regions, while a second impurity diffusion region partially overlaps the first. The contact hole extends over the second impurity diffusion region, with its opening width being greater than or equal to that of the first impurity diffusion region.

Career Highlights

Furuta is currently employed at Matsushita Electronics Corporation, where he continues to innovate in semiconductor technology. His work has contributed to advancements in the efficiency and functionality of semiconductor devices.

Collaborations

Throughout his career, Takashi Furuta has collaborated with notable colleagues, including Shuichi Nishida and Shigeki Sawada. These collaborations have further enhanced the impact of his inventions in the semiconductor field.

Conclusion

Takashi Furuta's contributions to semiconductor technology through his patents and work at Matsushita Electronics Corporation highlight his role as a significant inventor in the industry. His innovative approaches continue to shape the future of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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