Yokkaichi, Japan

Takanori Usami

This inventor holds 1 USPTO granted patent. Top assignee: Toshiba Memory Corporation. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takanori Usami. Retrieved from https://idiyas.com/inventor/takanori-usami

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Takanori Usami: Innovator in Storage Device Technology

Introduction

Takanori Usami is a prominent inventor based in Yokkaichi, Japan. He has made significant contributions to the field of storage device technology. His innovative work has led to the development of a unique storage device that incorporates advanced materials and design.

Latest Patents

Takanori Usami holds a patent for a storage device that features a first conductive layer, a second conductive layer, and a resistance change element positioned between these layers. Additionally, the device includes an intermediate layer that contains elements such as silicon (Si), germanium (Ge), tellurium (Te), and aluminum (Al). This innovative design aims to enhance the performance and efficiency of storage devices. He has 1 patent to his name.

Career Highlights

Usami is currently employed at Toshiba Memory Corporation, where he continues to push the boundaries of storage technology. His work at Toshiba has positioned him as a key player in the development of next-generation memory solutions.

Collaborations

Throughout his career, Takanori Usami has collaborated with notable colleagues, including Takeshi Ishizaki and Ryohei Kitao. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Takanori Usami's contributions to storage device technology exemplify the spirit of innovation. His work not only advances the field but also sets the stage for future developments in memory solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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