The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2021

Filed:

Sep. 13, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Takanori Usami, Yokkaichi, JP;

Takeshi Ishizaki, Nagoya, JP;

Ryohei Kitao, Yokkaichi, JP;

Katsuyoshi Komatsu, Yokkaichi, JP;

Takeshi Iwasaki, Kuwana, JP;

Atsuko Sakata, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2409 (2013.01); H01L 27/224 (2013.01);
Abstract

A storage device according to embodiments includes a first conductive layer; a second conductive layer; a resistance change element provided between the first conductive layer and the second conductive layer; and an intermediate layer provided in any one of a position between the resistance change element and the first conductive layer and a position between the resistance change element and the second conductive layer, the intermediate layer containing at least one element of silicon (Si) and germanium (Ge), tellurium (Te), and aluminum (Al).


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