Takahiro Hamano

Title: Takahiro Hamano: Innovator in Semiconductor Memory Technology

Introduction

Takahiro Hamano is a notable inventor based in Yamato, Japan. He has made significant contributions to the field of semiconductor memory technology. With a total of 2 patents, his work focuses on enhancing the performance and reliability of memory devices.

Latest Patents

One of his latest patents is titled "Semiconductor memory having an operation margin against a write recovery." This invention involves an address transition detecting circuit that generates an address detection signal during the writing of input data into a static random access memory (SRAM). The circuit ensures that bit line precharge and equalize signals are generated in synchronization with the address transition detection signal, preventing write errors. Another significant patent is for a "Semiconductor memory device," which includes a main row decoder that drives main word lines in a memory cell array. This device utilizes partial decoders and a combination of NAND gates, inverters, fuse elements, and MOS transistors to enhance memory performance.

Career Highlights

Takahiro Hamano is currently employed at Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to focus on innovative solutions in semiconductor memory technology. His contributions have been instrumental in advancing the capabilities of memory devices.

Collaborations

Takahiro has collaborated with notable coworkers, including Masataka Matsui and Katsuhiko Sato. Their combined expertise has fostered a productive environment for innovation and development in their field.

Conclusion

Takahiro Hamano's contributions to semiconductor memory technology exemplify the impact of innovation in the tech industry. His patents reflect a commitment to improving memory device performance and reliability. His work continues to influence advancements in this critical area of technology.