Tsuruoka, Japan

Taiki Goto

This inventor holds 1 USPTO granted patent. Top assignee: Seiko Epson Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Taiki Goto. Retrieved from https://idiyas.com/inventor/taiki-goto-kpgkladc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Taiki Goto and Inertial Sensor Technology.

Introduction

Taiki Goto is an inventor associated with Tsuruoka, Japan, and Seiko Epson Corporation. His patent work concerns inertial sensor technology and its manufacture.

Latest Patents

The provided information lists one patent associated with Goto: “Inertial Sensor, Method of Manufacturing Inertial Sensor, and Inertial Measurement Unit.” The invention describes a sensor built on a substrate with an insulating film and two semiconductor layers. Oxide films are placed on facing side surfaces of the semiconductor layers, with a planarization insulating film above and between them. Wiring on the planarization film electrically connects to the second semiconductor layer. The patent also addresses a method of manufacturing the sensor and an inertial measurement unit. Goto is credited with 1 patent in the supplied data.

Career Highlights

Goto’s listed patent reflects work on the structure and fabrication of inertial sensors, components used in inertial measurement systems. The supplied information identifies Seiko Epson Corporation as his company.

Collaborations

Teruo Takizawa and Kazunori Ueno are identified as Goto’s coworkers. The available details do not specify their roles in the patent or whether they collaborated directly on the invention.

Conclusion

Taiki Goto’s listed patent focuses on semiconductor-layer and oxide-film arrangements for an inertial sensor, alongside its manufacturing method and use in an inertial measurement unit.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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