Sendai, Japan

Taiichi Otsuji

This inventor holds 3 USPTO granted patents and 2 EPO patents. Top assignees: Centre National De La Recherche Scientifique, Hokkaido University, Kyushu Institute of Technology. Active years: 2011-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Taiichi Otsuji. Retrieved from https://idiyas.com/inventor/taiichi-otsuji

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 66.7


Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 17(Granted Patents)


Location History:

  • Kitakyushu, JP (2011)
  • Sendai, JP (2012 - 2015)

Company Filing History:


Years Active: 2011-2015

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3 patents (USPTO):Explore Patents

Title: Taiichi Otsuji: Innovator in Terahertz Technology

Introduction

Taiichi Otsuji is a prominent inventor based in Sendai, Japan. He has made significant contributions to the field of terahertz technology, holding a total of 3 patents. His work focuses on improving the efficiency of electromagnetic wave conversion and developing advanced logical gate devices.

Latest Patents

One of his latest inventions is a terahertz electromagnetic wave conversion device. The purpose of this invention is to enhance the efficiency of conversion between terahertz electromagnetic wave energy and direct current energy through plasma waves. This device features a high electron mobility transistor (HEMT) structure that includes a substrate, an electron transit layer, an electron supply layer, a source, and a drain. It also incorporates a first and second group of gates, where the gate length of each finger in the first group is narrower than that of the second group. The unequal lengths of the distances from each finger of the first group to adjacent fingers of the second group are also a notable aspect of this invention.

Another significant patent is the complementary logic gate device. This device is represented by a silicon CMOS logical circuit among semiconductor integrated logical circuits. It effectively addresses the speed performance limits of ultra-large scale integration and ultra-low power consumption logical circuits. The complementary logic gate includes an electron running layer formed by graphene, which does not utilize n-channel or p-channel FETs. It features ambipolar characteristics and employs only two FETs with different threshold values, constituting an input and output terminal configuration.

Career Highlights

Throughout his career, Taiichi Otsuji has worked with esteemed institutions such as Université De Montpellier and Hokkaido University. His research and innovations have significantly impacted the field of semiconductor technology and terahertz applications.

Collaborations

Some of his notable coworkers include Eiichi Sano and Yahya Moubarak Meziani. Their collaborative efforts have contributed to advancing research in their respective fields.

Conclusion

Taiichi Otsuji is a distinguished inventor whose work in terahertz technology and logical gate devices has paved the way for future innovations. His contributions continue to influence the landscape of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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