The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Dec. 03, 2010
Taiichi Otsuji, Sendai, JP;
Viacheslav Popov, Saratov, RU;
Wojciech Knap, Montpellier, FR;
Yahya Moubarak Meziani, Salamanca, ES;
Nina Diakonova, Montpellier, FR;
Dominique Coquillat, Montpellier, FR;
Frederic Teppe, Montpellier, FR;
Denis Fateev, Saratov, RU;
Jesus Enrique Velazquez Perez, Salamanca, ES;
Taiichi Otsuji, Sendai, JP;
Viacheslav Popov, Saratov, RU;
Wojciech Knap, Montpellier, FR;
Yahya Moubarak Meziani, Salamanca, ES;
Nina Diakonova, Montpellier, FR;
Dominique Coquillat, Montpellier, FR;
Frederic Teppe, Montpellier, FR;
Denis Fateev, Saratov, RU;
Jesus Enrique Velazquez Perez, Salamanca, ES;
Tohoku University, Sendai-shi, JP;
Centre National de la Recherche Scientifique (CNRS), Paris, FR;
Universite Montpellier 2, Montpellier, FR;
Abstract
The purpose of the present invention is to improve the efficiency of conversion between terahertz electromagnetic wave energy and direct current energy via plasma waves in a terahertz electromagnetic wave conversion device with a field effect transistor structure. This invention has an HEMT structure having a substrate, an electron transit layer, an electron supply layer, a source and a drain, and includes a first and second group of gates. The gate length of each finger of the first group of gates is narrower than the gate length of each finger of the second group of gates, and each finger of each group of gates is disposed between the source and the drain on the same cycle. A first and second distance from each finger of the first group of gates to two fingers of the second group of gates adjacent to each finger are unequal lengths.