Suwon, South Korea

Taeseob Oh

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Taeseob Oh. Retrieved from https://idiyas.com/inventor/taeseob-oh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Taeseob Oh and Temperature-Compensated Write Clock Bias Technology.

Introduction

Taeseob Oh is an inventor based in Suwon, South Korea, and is associated with Samsung Electronics Co., Ltd. His patent work includes a memory-device technology designed to maintain reliable write-clock operation as temperature changes affect transistor threshold voltage.

Latest Patents

Oh is credited with 1 patent: “Write Clock Bias Generator Configured to Compensate for Change of Threshold Voltage of Transistor According to Change of Temperature and Memory Device Including the Same.”

The invention describes a generator that supplies a write-clock bias to a buffer. It uses a voltage regulator, a resistor string, a multiplexer, and a compensation circuit. The compensation circuit includes transistor strings that help adjust the bias in response to temperature-related changes in transistor threshold voltage, supporting stable operation in a memory device.

Career Highlights

Oh’s listed patent reflects work on circuit design for memory devices, particularly temperature compensation in write-clock bias generation. He is associated with Samsung Electronics Co., Ltd.

Collaborations

Oh’s listed coworker is Jang Hoo Kim. The patent information provided identifies both inventors in connection with the described write-clock bias generator and memory-device technology.

Conclusion

Taeseob Oh’s patent focuses on compensating for temperature-driven transistor changes to help maintain dependable write-clock bias in memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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