Daejeon, South Korea

Taek Seung Yang

This inventor holds 1 USPTO granted patent. Top assignee: Korea Research Institute of Chemical Technology. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Taek Seung Yang. Retrieved from https://idiyas.com/inventor/taek-seung-yang-5ix6mkz2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: Taek Seung Yang: Copper Thin-Film Deposition Innovation.

Introduction

Taek Seung Yang is an inventor based in Daejeon, South Korea. His work includes research into materials and processes for producing copper thin films.

Latest Patents

Yang is associated with one patent, titled “Volatile Copper Aminoalkoxide Complex and Deposition of Copper Thin Film Using Same.” The invention describes a volatile copper aminoalkoxide complex intended for use in metal-organic chemical vapor deposition (MOCVD). The disclosed approach aims to produce copper thin films with improved quality. The complex’s substituents are independently selected alkyl groups that may carry fluorine substituents, and the specified value of *m* ranges from 1 to 3. Yang’s patent portfolio includes 1 patent.

Career Highlights

Yang works at the Korea Research Institute of Chemical Technology, a research institution in South Korea. His patent reflects work on precursor chemistry and thin-film deposition.

Collaborations

Yang’s listed coworkers include Taek-Mo Chung and Yunsoo Kim. Their names are associated with the same research and patent context.

Conclusion

Taek Seung Yang’s patent focuses on a copper aminoalkoxide precursor for MOCVD, highlighting his contribution to research on copper thin-film deposition at the Korea Research Institute of Chemical Technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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