This inventor holds 1 USPTO granted patent. Top assignee: Korea Research Institute of Chemical Technology. Active years: 2006.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2006
Title: Taek Seung Yang: Inventor in Copper Thin-Film Deposition.
Introduction
Taek Seung Yang is an inventor based in Daejeon, South Korea. His patent work concerns a copper aminoalkoxide complex designed for use in depositing copper thin films.
Latest Patents
Yang is named on one patent, “Volatile Copper Aminoalkoxide Complex and Deposition of Copper Thin Film Using Same.” The invention describes a volatile copper aminoalkoxide complex for metal-organic chemical vapor deposition (MOCVD), a process used to form copper thin films. The patent presents the complex as a means of producing films with improved quality. Its specified chemical structure includes independently selected alkyl groups, which may carry fluorine substituents, and a parameter, *m*, ranging from 1 to 3. Yang’s recorded patent count is 1 patent.
Career Highlights
Yang is associated with the Korea Research Institute of Chemical Technology. His patent reflects research focused on precursor chemistry and thin-film deposition, areas relevant to materials and chemical technology.
Collaborations
The patent’s listed coworkers include Taek-Mo Chung and Yunsoo Kim, indicating Yang’s collaboration with fellow researchers on copper precursor and deposition technology.
Conclusion
Taek Seung Yang’s recorded invention centers on a volatile copper aminoalkoxide complex intended to support improved copper thin-film quality through MOCVD.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile