Madison, WI, United States of America

Tae Wan Kim

This inventor holds 1 USPTO granted patent. Top assignee: Wisconsin Alumni Research Foundation. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tae Wan Kim. Retrieved from https://idiyas.com/inventor/tae-wan-kim-2szswlyq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2015

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations of Tae Wan Kim

Introduction

Tae Wan Kim is a notable inventor based in Madison, WI (US). He has made significant contributions to the field of semiconductor technology. His work focuses on the development of virtual substrates, which are essential for various applications in electronics.

Latest Patents

Tae Wan Kim holds a patent for "Virtual substrates by having thick, highly relaxed metamorphic buffer layer structures by hydride vapor phase epitaxy." This patent describes virtual substrates made by hydride vapor phase epitaxy, which include a semiconductor growth substrate and a substantially strain-relaxed metamorphic buffer layer (MBL) structure. The MBL structure is compositionally graded, allowing for a transition in lattice constants from the growth substrate to the surface of the MBL. The virtual substrates feature relatively thick MBL structures (e.g., >20 µm) and thick growth substrates (e.g., >0.5 mm).

Career Highlights

Tae Wan Kim is associated with the Wisconsin Alumni Research Foundation, where he continues to innovate in the field of semiconductor materials. His work has implications for improving the performance and efficiency of electronic devices.

Collaborations

He has collaborated with notable colleagues such as Thomas Francis Kuech and Kevin Louis Schulte, contributing to advancements in semiconductor technology.

Conclusion

Tae Wan Kim's innovative work in the development of virtual substrates showcases his expertise and commitment to advancing semiconductor technology. His contributions are vital for the future of electronics and materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…