Wisconsin Alumni Research Foundation

Tae Wan Kim

Luke J Mawst

Thomas Francis Kuech

Kevin Louis Schulte

Brian T Zutter

Virtual substrates made by hydride vapor phase epitaxy are provided comprising a semiconductor growth substrate and a substantially strain-relaxed metamorphic buffer layer (MBL) structure comprising one or more layers of a semiconductor alloy on the growth substrate. The MBL structure is compositionally graded such that its lattice constant transitions from a lattice constant at the interface with the growth substrate that is substantially the same as the lattice constant of the growth substrate to a lattice constant at a surface opposite the interface that is different from the lattice constant of the growth substrate. The virtual substrates comprise relatively thick MBL structures (e.g., &#x3e;20 &#x3bc;m) and relatively thick growth substrates (e.g., &#x3e;0.5 mm).

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Madison, WI, United States of America

Tae Wan Kim