The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
May. 15, 2013
Wisconsin Alumni Research Foundation, Madison, WI (US);
Thomas F. Kuech, Madison, WI (US);
Kevin L. Schulte, Madison, WI (US);
Luke J. Mawst, Sun Prairie, WI (US);
Tae Wan Kim, Madison, WI (US);
Brian T. Zutter, Madison, WI (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Abstract
Virtual substrates made by hydride vapor phase epitaxy are provided comprising a semiconductor growth substrate and a substantially strain-relaxed metamorphic buffer layer (MBL) structure comprising one or more layers of a semiconductor alloy on the growth substrate. The MBL structure is compositionally graded such that its lattice constant transitions from a lattice constant at the interface with the growth substrate that is substantially the same as the lattice constant of the growth substrate to a lattice constant at a surface opposite the interface that is different from the lattice constant of the growth substrate. The virtual substrates comprise relatively thick MBL structures (e.g., >20 μm) and relatively thick growth substrates (e.g., >0.5 mm).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile