Seongnam, South Korea

Tae-Min Kim

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tae-Min Kim. Retrieved from https://idiyas.com/inventor/tae-min-kim-3iqmroc2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Tae-Min Kim: Innovator in Semiconductor Manufacturing

Introduction

Tae-Min Kim is a prominent inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of semiconductor manufacturing. His innovative work has led to the development of a unique apparatus that enhances the efficiency of semiconductor device production.

Latest Patents

Tae-Min Kim holds a patent for an "Apparatus for manufacturing a semiconductor device and method of manufacturing the apparatus." This invention includes a heater designed to heat a target and a coating layer composed of a ternary material of transition metal (M)-aluminum (Al)-nitrogen (N), represented by the chemical formula MAlN. The parameters of this formula are defined such that 0

Career Highlights

Tae-Min Kim is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His role involves research and development in semiconductor technologies, where he applies his expertise to create innovative solutions that meet industry demands.

Collaborations

Tae-Min has collaborated with notable colleagues, including Hwanyeol Park and Kyung Nam Kang. Their teamwork has contributed to advancements in semiconductor manufacturing processes.

Conclusion

Tae-Min Kim's contributions to semiconductor manufacturing through his patented inventions highlight his role as a key innovator in the field. His work continues to influence the technology landscape, paving the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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