The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
May. 04, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Hwanyeol Park, Seoul, KR;
Kyung Nam Kang, Hwaseong-si, KR;
Jeong Hoon Nam, Suwon-si, KR;
Se Jin Kyung, Seoul, KR;
Dae Wee Kong, Yongin-si, KR;
Tae-Min Kim, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/687 (2006.01); C22C 21/00 (2006.01); C23C 16/30 (2006.01); C23C 16/458 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67098 (2013.01); C22C 21/00 (2013.01); C22C 21/003 (2013.01); C23C 16/303 (2013.01); C23C 16/4581 (2013.01); C23C 16/4586 (2013.01);
Abstract
An apparatus for manufacturing a semiconductor device and a method of manufacturing the apparatus, the apparatus including a heater configured to heat a target, and a coating layer, the coating layer including a ternary material of transition metal (M)-aluminum (Al)-nitrogen (N) represented by the following Chemical Formula:MAlN, [Chemical Formula]wherein x and y satisfy the following relations: 0<x<1 and y≥1.