Suwon, South Korea

Tae-Byung Hwang

This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2000-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tae-Byung Hwang. Retrieved from https://idiyas.com/inventor/tae-byung-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 2000-2001

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2 patents (USPTO):Explore Patents

Title: Innovations by Tae-Byung Hwang

Introduction

Tae-Byung Hwang is a notable inventor based in Suwon, South Korea. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents to his name, Hwang's work focuses on enhancing the efficiency and functionality of semiconductor devices.

Latest Patents

Hwang's latest patents include a semiconductor device and a method of making the same. This invention discloses a semiconductor device that comprises a substrate with at least one gate electrode. The gate electrode features lateral walls and edges, with spacers formed on its lateral walls. Active areas are created within the substrate at the edges of the gate electrode. Additionally, a DRAM cell forming part is integrated into the substrate, which includes at least one gate electrode and an active area. A logic forming part is also included, featuring its own gate electrode and active area. The device is equipped with a silicide blocking layer at the active area of the DRAM cell forming part, along with a silicide layer on the gate electrode of the DRAM cell and the logic forming part. This method simplifies the process and allows for selective silicidation of a highly integrated DRAM and an embedded DRAM.

Another patent by Hwang focuses on preventing misalignment of the selective silicide layer in semiconductor devices. Similar to his previous invention, this device also includes a substrate with a gate electrode, spacers, and active areas. The method aims to enhance the reliability and performance of semiconductor devices by addressing alignment issues.

Career Highlights

Tae-Byung Hwang is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to contribute to cutting-edge innovations in semiconductor technology. Hwang's expertise in this field has positioned him as a valuable asset to his team and the company.

Collaborations

Hwang collaborates with Duck-Hyung Lee, a fellow innovator in the semiconductor industry. Their partnership has fostered a creative environment that encourages the development of advanced technologies.

Conclusion

Tae-Byung Hwang's contributions to semiconductor technology through his patents demonstrate his commitment to innovation. His work continues to influence the industry, paving the way for future advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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