The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Oct. 24, 2000
Tae-Byung Hwang, Suwon, KR;
Duck-Hyung Lee, Yongin, KR;
Samsung Electronics Co., LTD, Suwon, KR;
Abstract
A semiconductor device and a method of making the semiconductor device are disclosed. The semiconductor device includes a substrate having at least one gate electrode, the gate electrode having lateral walls and edges. Spacers are formed on the lateral walls of the gate electrode, and active areas are formed inside the substrate at the edges of the gate electrode. A DRAM cell forming part is disposed on a portion of the substrate, and includes at least one gate electrode and an active area, and a logic forming part is disposed on another portion of the substrate, and includes at least one gate electrode and an active area. The device further includes a silicide blocking layer disposed at the active area of the DRAM cell forming part, and a silicide layer formed on at least one gate electrode of the DRAM cell forming part, and on a gate electrode and the active area of the logic forming part. The method is simplified and provides selective silicidation of a highly integrated DRAM and an embedded DRAM where the DRAM cell forming part and the logic forming part are merged.