Ibaraki, Japan

Tadashi Takenaka


Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: **Tadashi Takenaka: Innovator in Zinc Oxide Semiconductors**

Introduction

Tadashi Takenaka is a noted inventor based in Ibaraki, Japan, recognized for his contribution to the field of semiconductor technology. With a focus on zinc oxide-based materials, Takenaka has made significant strides in creating innovative structures that enhance electronic properties.

Latest Patents

One of Takenaka's most notable patents is titled “Zinc oxide-based multilayer structural body and its producing method.” This invention details a zinc oxide semiconductor featuring a laminated structure that includes two zinc oxide layers. The innovation focuses on the specific relationships between the lattice volumes and donor concentrations of these layers, enabling efficient charge transfer without the need for an external electric field. This groundbreaking work presents a charge-supplying layer and a charge-receiving layer, paving the way for advancements in semiconductor applications.

Career Highlights

Currently, Tadashi Takenaka is affiliated with the National Institute for Materials Science, where he continues to explore and develop new materials that have the potential to revolutionize the semiconductor industry. His work reflects a commitment to innovation and research excellence, contributing to the understanding and practical applications of zinc oxide in modern technology.

Collaborations

Throughout his career, Takenaka has collaborated with esteemed colleagues such as Naoki Ohashi and Hajime Haneda. These partnerships have fostered an environment of knowledge exchange and collaboration, leading to increased advancements in their joint research initiatives.

Conclusion

Tadashi Takenaka exemplifies the spirit of innovation within the scientific community. His patent on zinc oxide-based multilayer structures not only highlights his expertise but also sets the stage for future developments in semiconductor technology. His work, alongside colleagues at the National Institute for Materials Science, continues to inspire and propel advancements in the field.

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