The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Aug. 19, 2004
Naoki Ohashi, Ibaraki, JP;
Hajime Haneda, Ibaraki, JP;
Haruki Ryoken, Ibaraki, JP;
Isao Sakaguchi, Ibaraki, JP;
Yutaka Adachi, Ibaraki, JP;
Tadashi Takenaka, Ibaraki, JP;
Naoki Ohashi, Ibaraki, JP;
Hajime Haneda, Ibaraki, JP;
Haruki Ryoken, Ibaraki, JP;
Isao Sakaguchi, Ibaraki, JP;
Yutaka Adachi, Ibaraki, JP;
Tadashi Takenaka, Ibaraki, JP;
National Institute for Materials Science, Tsukuba-shi, JP;
Abstract
A zinc oxide semiconductor has a zinc oxide-based laminated structure including two layers of a zinc oxide layer with a lattice volume of Va and a donor concentration of Na, and a zinc oxide or zinc oxide solid solution layer with a lattice volume of Vb and a donor concentration of Nb. The relationships of Va<Vb and Na>Nb are satisfied. The layer with the lattice volume Va serves as a charge-supplying layer and the layer with the lattice volume Vb serves as a charge-receiving layer in the laminated structure. The charge is transferred from the layer serving as the charge-supplying layer to the layer serving as the charge-receiving layer even when no external electric field is applied to the laminated structure. A charge depletion layer is formed in the charge-supplying layer due to charge transfer from the charge-supplying layer to the charge-receiving layer.