This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 1993.
Company Filing History:
1 out of 834,350 Years Active: 1993
Title: T C Ong - Innovator in Flash EPROM Technology
Introduction
T C Ong is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of memory technology, particularly in the development of flash electrically programmable read-only memory (EPROM) devices. His innovative approach has led to advancements in memory density and efficiency.
Latest Patents
T C Ong holds a patent for a process titled "Process for fabricating a flash EPROM having reduced cell size." This patent describes a method for fabricating an electrically programmable read-only memory array with increased density. The process involves forming recessed field oxide regions in a silicon substrate, followed by the creation of elongated parallel wordline stacks over the substrate's surface. Source and drain regions are established through ion implantation in the openings between these vertical stacks. The openings are then filled with a metal layer to achieve a substantially planar wafer. This metal layer is patterned to create drain contact pads and V.sub.SS interconnect strips, which connect adjacent source regions across field oxide regions that insulate neighboring memory cells.
Career Highlights
Throughout his career, T C Ong has demonstrated a commitment to innovation in semiconductor technology. His work has not only contributed to the advancement of flash memory but has also paved the way for more compact and efficient memory solutions in various electronic devices.
Collaborations
T C Ong has collaborated with several talented individuals in his field, including Gregory E Atwood and Been-Jon K Woo. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.
Conclusion
T C Ong's contributions to the field of flash EPROM technology highlight his role as an influential inventor. His innovative processes have significantly impacted memory technology, leading to advancements that benefit the electronics industry.