This inventor holds 1 USPTO granted patent. Top assignee: Siliconix Incorporated. Active years: 1997.
Company Filing History:
Years Active: 1997
Title: Sze H Ng: Innovator in Trench DMOS Transistor Technology
Introduction
Sze H Ng is a notable inventor based in Sunnyvale, CA, who has made significant contributions to the field of semiconductor technology. With a focus on improving the efficiency and reliability of power transistors, Ng's work has implications for various electronic applications.
Latest Patents
Ng holds a patent for a "Trenched DMOS transistor with buried layer for reduced on-resistance." This innovative design features a buried layer region formed between the drain region and the overlying drift region. The buried layer has the same doping type as the drift and drain regions but is more highly doped. This configuration is achieved through implantation prior to the epitaxial growth of the drift region. By optimizing the doping profile, the design ensures that avalanche breakdown occurs at the buried layer region, significantly reducing drain-source on-resistance. This advancement eliminates the JFET region found in prior art devices, enhancing both device ruggedness and reliability.
Career Highlights
Sze H Ng is associated with Siliconix Incorporated, a company known for its innovations in power management and semiconductor solutions. Her work at Siliconix has positioned her as a key player in the development of advanced transistor technologies.
Collaborations
Ng has collaborated with notable colleagues, including Fwu-Iuan Hshieh and Mike F Chang, contributing to a dynamic team focused on pushing the boundaries of semiconductor technology.
Conclusion
Sze H Ng's contributions to the field of trench DMOS transistors exemplify her innovative spirit and dedication to enhancing electronic device performance. Her patent reflects a significant advancement in semiconductor technology, showcasing her role as a leading inventor in this domain.