Sendai, Japan

Syun Ishikawa

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Syun Ishikawa - Innovator in Micro-Vacancy Processing

Introduction

Syun Ishikawa is a talented inventor based in Sendai-shi, Japan. She has made significant contributions to the field of micro-vacancy processing. Her innovative approach focuses on enhancing the efficiency of etching and cleaning processes in narrow and deep micro vacancies.

Latest Patent Applications

Syun Ishikawa's notable patent application is titled "METHOD FOR TREATING INNER WALL SURFACE OF MICRO-VACANCY." This application presents a method for processing the inner wall surface of a micro vacancy. The method is designed to reliably etch and clean even when the hole provided to the substrate is narrow and deep. The substrate features a surface for applying a processing solution and a micro vacancy with an opening on the surface. The aspect ratio of the micro vacancy is at least 5, or if it is less than 5, the ratio of the micro vacancy volume to the surface area of the opening must be at least 3. The substrate is arranged in a processing space, which is then depressurized before introducing the processing solution to process the inner wall surface of the micro vacancy.

Conclusion

Syun Ishikawa's work in micro-vacancy processing showcases her innovative spirit and dedication to advancing technology in this specialized field. Her contributions are poised to make a significant impact on future developments in micro-processing techniques.

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