Canon Inc.

Syun Ishikawa

Takeshi Sakai

Tatsuro Yoshida

Ryosuke Hiratsuka

There is provided a method for processing an inner wall surface of a micro vacancy, capable of reliably etching or cleaning even if the hole provided to the substrate to be processed is narrow and deep. The substrate has a surface and a micro vacancy with an opening on the surface. An aspect ratio of the micro vacancy being at least 5, or the aspect ratio being less than 5 and a ratio of a micro vacancy volume to a surface area of the opening being at least 3. The micro vacancy is exposed to an atmosphere for forming a silicon oxide film so as to form a silicon oxide film on the inner wall surface of the micro vacancy. Subsequently a processing solution with a wettability with respect to silicon oxide is introduced into the micro vacancy so as to perform processing of the inner wall surface.

Growing community of inventors

Sendai, Japan

Syun Ishikawa