Kyoto, Japan

Syojiro Dohi

This inventor holds 1 USPTO granted patent. Top assignee: Nissin Ion Equipment Co., Ltd.. Active years: 2012.


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Syojiro Dohi: Innovator in Ion Implantation Technology

Introduction

Syojiro Dohi is a notable inventor based in Kyoto, Japan. He has made significant contributions to the field of ion implantation technology. His innovative work has led to advancements in the methods used for operating ion sources.

Latest Patents

Dohi holds a patent for a "Method of operating ion source and ion implanting apparatus." This patent describes a process where an ion beam is extracted from an ion source using a gas containing boron trifluoride. The gas is supplied into a plasma chamber for the ion source, and a bias voltage of the plasma electrode is set to be positive with respect to the plasma chamber. This innovative approach enhances the efficiency of ion implantation processes.

Career Highlights

Syojiro Dohi is associated with Nissin Ion Equipment Co., Ltd., a company known for its expertise in ion implantation technology. His work at this company has been instrumental in developing advanced ion source technologies. Dohi's contributions have helped improve the performance and reliability of ion implantation systems.

Collaborations

Dohi has collaborated with notable colleagues such as Yutaka Inouchi and Yasunori Ando. Their combined expertise has fostered innovation and development in the field of ion implantation.

Conclusion

Syojiro Dohi's contributions to ion implantation technology through his patent and work at Nissin Ion Equipment Co., Ltd. highlight his role as a key innovator in this specialized field. His advancements continue to influence the industry and pave the way for future developments.

Profile summary based on public USPTO records.
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