Company Filing History:
2 out of 9 
1 out of 1 
1 out of 1 Years Active: 1997-2013
Title: Sylwester Porowski: Innovator in Semiconductor Technology
Introduction
Sylwester Porowski is a notable inventor based in Warsaw, Poland. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work primarily focuses on advancements in laser diodes and surface-enhanced Raman scattering studies.
Latest Patents
One of his latest patents is titled "Substrate for Surface Enhanced Raman Scattering Studies." This invention relates to a substrate that includes a semiconductor surface with whiskers, which are coated with metals such as silver, gold, platinum, copper, and their alloys. The semiconductor used is a gallium-containing nitride, and each whisker contains a linear defect inside. Another significant patent is "Nitride Based Laser Diode and Method of Manufacturing Nitride Based Laser Diode." This patent describes a laser diode that comprises a crystalline substrate with a series of n-type layers, optically active layers, and p-type layers. The method of making this invention involves the epitaxial deposition of these layers using plasma-assisted molecular beam epitaxy.
Career Highlights
Throughout his career, Sylwester Porowski has worked with esteemed institutions such as the Institute of High Pressure Physics of the Polish Academy of Sciences and the High Pressure Research Center of the Polish Academy of Sciences. His work in these organizations has contributed to the advancement of high-pressure physics and semiconductor technologies.
Collaborations
He has collaborated with notable colleagues, including Izabella Grzegory and Tadeusz Suski, who have also contributed to the field of semiconductor research.
Conclusion
Sylwester Porowski's innovative work in semiconductor technology and his numerous patents highlight his significant impact on the field. His contributions continue to influence advancements in laser diodes and surface-enhanced Raman scattering studies.
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