The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Aug. 09, 2005
Czeslaw Skierbiszewski, Warsaw, PL;
Sylwester Porowski, Warsaw, PL;
Izabella Grzegory, Warsaw, PL;
Piotr Perlin, Warsaw, PL;
Michal Leszczyński, Lesznowola, PL;
Marcin Siekacz, Turek, PL;
Anna Feduniewicz-zmuda, Rzeszów, PL;
Przemyslaw Wiśniewski, Warsaw, PL;
Tadeusz Suski, Nowy Prázmów, PL;
Michal Boćkowski, Warsaw, PL;
Czeslaw Skierbiszewski, Warsaw, PL;
Sylwester Porowski, Warsaw, PL;
Izabella Grzegory, Warsaw, PL;
Piotr Perlin, Warsaw, PL;
Michal Leszczyński, Lesznowola, PL;
Marcin Siekacz, Turek, PL;
Anna Feduniewicz-Zmuda, Rzeszów, PL;
Przemyslaw Wiśniewski, Warsaw, PL;
Tadeusz Suski, Nowy Prázmów, PL;
Michal Boćkowski, Warsaw, PL;
Instytut Wysokich Cisnien Polskiej Akademii Nauk, Warszawa, PL;
Abstract
The laser diode comprising crystalline substrate () where set of subsequent n-type layers, set of optically active layers () and set of p-type layers is deposited. The set of n-type layers comprise at least one buffer layer (), bottom n-type cladding layer () and n-type bottom waveguide layer. The set of p-type layers comprise at least p-type upper waveguide, which comprises electron blocking layer, upper p-type cladding layer () and p-type contact layer (). The electron blocking layer comprises In, AlGa, N alloy doped with magnesium where 1≧x>0.001 a 1≧y 0. The way of making this invention is based on the epitaxial deposition of subsequent set of the n-type layers (), set of optically active layers () and set of p-type layers () where the p-type waveguide layer () and p-type contact layer () is deposited with presence of indium in plasma assisted molecular beam epitaxy method.