The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Dec. 06, 1999
Sylwester Porowski, Warsaw, PL;
Michal Bockowski, Warsaw, PL;
Izabella Grzegory, Warsaw, PL;
Stanislaw Krukowski, Warsaw, PL;
Michal Leszczynski, Warsaw, PL;
Boleslaw Lucznik, Warsaw, PL;
Tadeusz Suski, Warsaw, PL;
Miroslaw Wroblewski, Warsaw, PL;
Abstract
The method of fabrication of highly resistive GaN bulk crystals by crystallization from the solution of atomic nitrogen in the molten mixture of metals, containing gallium in the concentration not lower than 90 at. % and the Periodic Table group II metals: calcium, beryllium or in the concentration of 0.01-10 at. %, at the temperature 1300-1700° C., under the nitrogen pressure 0.5-2.0 GPa and in the presence of temperature gradient characterized by the temperature gradient not higher than 10° C./cm.